Nanoanalysis of crystalline properties of GaN thin film using tip-enhanced Raman spectroscopy
Nanoanalysis of crystalline properties of GaN thin film using tip-enhanced Raman spectroscopy
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DOI：
10.1063/1.2458343
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发表时间：
2007-02-05
影响因子：
4
通讯作者：
Kawata, Satoshi
中科院分区：
文献类型：
--
作者：
Matsui, Ryota;Verma, Prabhat;Kawata, Satoshi
通过尖端增强拉曼散射（TERS）对薄氮化镓样品进行纳米尺度的晶体性质变化，在常规的微拉曼散射下，该样品在微尺度上表现出良好而均匀的晶体性质。这一观测结果归功于近场技术的场增强和超分辨率。经评估，ers强度增强因子大于2.8x10(4)。在超出探测光衍射极限的空间分辨率下观察到晶体性质的变化。作者提出了一种有效的表征氮基半导体器件晶体性质的纳米技术。
Nanoscaled variation in crystalline properties was demonstrated through tip-enhanced Raman scattering (TERS) for a thin GaN sample, which apparently showed good and uniform crystalline properties at microscale in conventional micro-Raman scattering. The observation was attributed to the field enhancement and the super-resolution associated with the near-field technique. The enhancement factor of the TERS intensity was assessed to be larger than 2.8x10(4). Variations in crystalline properties were observed at spatial resolution beyond the diffraction limit of the probing light. The authors propose TERS to be an efficient technique for nanoscale characterization of crystalline properties for the nitride-based semiconductor devices.