Combining a Novel Charge-Based Capacitance Measurement (CBCM) Technique and Split $C$–$V$ Method to Specifically Characterize the STI Stress Effect Along the Width Direction of MOSFET Devices
Combining a Novel Charge-Based Capacitance Measurement (CBCM) Technique and Split $C$–$V$ Method to Specifically Characterize the STI Stress Effect Along the Width Direction of MOSFET Devices
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DOI：
10.1109/led.2008.922729
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发表时间：
2008-05
影响因子：
4.9
通讯作者：
Yao-Wen Chang;Hsing-Wen Chang;T. Lu;Y. King;Kuang-Chao Chen;Chih-Yuan Lu
中科院分区：
文献类型：
--
作者：
Yao-Wen Chang;Hsing-Wen Chang;T. Lu;Y. King;Kuang-Chao Chen;Chih-Yuan Lu
短沟道MOSFET器件中沿着长度方向的浅沟槽隔离（STI）应力效应已经得到了广泛的研究。然而，很少具体分析沿着宽度方向的效果。在本文中，我们联合收割机一种新的基于电荷的电容测量技术，这是用来提取MOSFET器件的本征，和分裂电容电压的方法来提取不同的沟道宽度的器件的迁移率。虽然已经知道，在沿着宽度方向的压缩STI应力的影响下，NMOS和PMOS器件的迁移率将随着宽度的减小而降低，但这是第一次量化这种STI应力分量对MOSFET器件的影响。
The shallow trench isolation (STI) stress effect along the length direction on short-channel MOSFET devices has already been widely studied. However, the effect along the width direction has seldom been specifically analyzed. In this paper, we combine a novel charge-based capacitance measurement technique, which is used to extract the intrinsic of MOSFET devices, and the split capacitance-voltage method to extract the mobility of devices with various channel widths. Although it is already known that under the influence of compressive STI stress along the width direction the mobility of both NMOS and PMOS devices will degrade with decreasing width, it is the first time to quantify the impact of this STI stress component on MOSFET devices.