Electronic transport studies of Ag-doped Bi2Se3 topological insulator
Electronic transport studies of Ag-doped Bi2Se3 topological insulator
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DOI：
10.1063/5.0102131
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发表时间：
2022-09
影响因子：
3.2
通讯作者：
Shailja Sharma;Shiv Kumar;Ashok Kumar;K. Shimada;C. S. Yadav
中科院分区：
文献类型：
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作者：
Shailja Sharma;Shiv Kumar;Ashok Kumar;K. Shimada;C. S. Yadav
本文介绍了银掺杂的Bi₂Se₃单晶的结构、磁输运以及角分辨光电子能谱（ARPES）。银掺杂的Bi₂Se₃的电阻率随温度变化呈现出金属特性，在200 K以上斜率发生变化。磁阻在低场下呈现出符合科勒规则的正二次方依赖关系。霍尔电阻率测量表明电子是主要的载流子。此外，这些结果与在T = 20 K时观察到的ARPES光谱吻合良好，此时费米能级位于体导带内部。与原始的Bi₂Se₃相比，银掺杂样品的拓扑表面态的狄拉克点向更高的结合能（约0.12 eV）移动。
The structural, magnetotransport, and angle-resolved photoemission spectroscopy (ARPES) of Ag-doped Bi2Se3 single crystals are presented. Temperature dependent resistivity exhibits metallic behavior with a slope change above 200 K for Ag-doped Bi2Se3. The magnetoresistance shows positive quadratic dependence at low fields satisfying Kohler's rule. Hall resistivity measurement shows that electrons are dominant charge carriers. Furthermore, these results agree well with the ARPES spectra observed at T = 20 K, where the Fermi level lies inside the bulk conduction band. The Dirac point of the topological surface states is shifted toward higher binding energy (∼0.12 eV) for Ag-doped samples as compared to pristine Bi2Se3.