Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes
Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes
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DOI：
10.1109/jphot.2020.3045218
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发表时间：
2020-12
影响因子：
2.4
通讯作者：
S. Gwyn;S. Watson;T. Slight;M. Knapp;S. Viola;P. Ivanov;Weikang Zhang;A. Yadav;E. Rafailov;M. Haji;K. Doherty;S. Stanczyk;S. Grzanka;P. Perlin;S. Najda;Mike Leszczyski;A. Kelly
中科院分区：
文献类型：
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作者：
S. Gwyn;S. Watson;T. Slight;M. Knapp;S. Viola;P. Ivanov;Weikang Zhang;A. Yadav;E. Rafailov;M. Haji;K. Doherty;S. Stanczyk;S. Grzanka;P. Perlin;S. Najda;Mike Leszczyski;A. Kelly
我们报告的特性和分析的GaN基分布反馈激光二极管（DFB-LD）与第三阶横向蚀刻侧壁光栅中心波长为420 nm。我们还比较了两种常用的法布里-珀罗（FP）器件在450 nm和520 nm的器件参数。提取了器件的固有特性，包括阻尼因子、载流子和光子寿命、调制效率、差分增益和寄生电容。这些参数表明，DFB具有较低的阻尼率和寄生电容，同时表现出较高的调制效率，表明DFB显示出良好的通信应用潜力。此外，GaN DFB的光谱线宽的报告。据作者所知，这是第一次演示的参数提取和光谱线宽测量GaN基DFB-LD。
We report on the characterization and analysis of a GaN-based distributed feedback laser diode (DFB-LD) with 3rd-order laterally etched sidewall gratings centered at a wavelength of 420 nm. We also compare the device parameters with two commonly used Fabry-Perot (FP) devices operating at 450 nm and 520 nm. Intrinsic properties of the devices were extracted, including damping factor, carrier and photon lifetimes, modulation efficiency, differential gain, and parasitic capacitance. These parameters showed that the DFB exhibits a lower damping rate and parasitic capacitance while demonstrating a higher modulation efficiency, indicating that the DFB shows good potential for communications applications. Additionally, spectral linewidth of a GaN DFB is reported. To the authors’ knowledge, this is the first demonstration of parameter extraction and spectral linewidth measurement for GaN-based DFB-LDs.