Electrostatic charge accumulation versus electrochemical doping in SrTiO3 electric double layer transistors
Electrostatic charge accumulation versus electrochemical doping in SrTiO3 electric double layer transistors
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DOI：
10.1063/1.3457785
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发表时间：
2010-06-21
影响因子：
4
通讯作者：
Kawasaki, M.
中科院分区：
文献类型：
--
作者：
Ueno, K.;Shimotani, H.;Kawasaki, M.
在双电层晶体与SrTiO 3单晶，我们发现静电电荷积累和电化学反应取决于偏置电压之间的显着差异。与低于3.7 V的可逆静电过程（最大薄层电荷载流子密度n（S）为10（14）cm（-2））相反，电化学过程甚至在移除高于3.75 V的栅极偏压之后也引起持续导电。n（S）在5 V下达到10（15）cm（-2），在2K时电子迁移率高达10（4）cm（2）/Vs。这种持续的导电源于SrTiO 3几微米深度内的缺陷形成。(C)2010年美国物理学会。[doi：10.1063/1.3457785]
In electric double layer transistors with SrTiO3 single crystals, we found distinct differences between electrostatic charge accumulation and electrochemical reaction depending on bias voltages. In contrast to the reversible electrostatic process below 3.7 V with a maximum sheet charge carrier density, n(S), of 10(14) cm(-2), the electrochemical process causes persistent conduction even after removal of the gate bias above 3.75 V. n(S) reached 10(15) cm(-2) at 5 V, and the electron mobility at 2 K was as large as 10(4) cm(2)/V s. This persistent conduction originates from defect formation within a few micrometers depth of SrTiO3. (C) 2010 American Institute of Physics. [doi:10.1063/1.3457785]