Photocurrents in a Single InAs Nanowire/Silicon Heterojunction.
Photocurrents in a Single InAs Nanowire/Silicon Heterojunction.
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DOI：
10.1021/acsnano.5b03017
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发表时间：
2015-09
期刊：
影响因子：
17.1
通讯作者：
A. Brenneis;Jan Overbeck;J. Treu;S. Hertenberger;S. Morkötter;M. Döblinger;J. Finley;G. Abstreiter;G. Koblmüller;A. Holleitner
中科院分区：
文献类型：
--
作者：
A. Brenneis;Jan Overbeck;J. Treu;S. Hertenberger;S. Morkötter;M. Döblinger;J. Finley;G. Abstreiter;G. Koblmüller;A. Holleitner
研究了垂直生长在p型掺杂硅衬底上的砷化铟纳米线的光电特性。我们应用扫描光电流显微镜来研究单异质结的光电特性。所测得的光电流特性是一致的，通过midgap陷阱状态，形成在Si/InAs异质结的过剩的电荷载流子运输。也就是说，陷阱态增加了一个额外的跨异质结的传输路径，并且缺陷的电荷改变了结处的能带弯曲。弯曲在小的偏置电压下产生光伏效应。此外，我们观察到的InAs纳米线内的光电导效应在大的偏压。
We investigate the optoelectronic properties of single indium arsenide nanowires, which are grown vertically on p-doped silicon substrates. We apply a scanning photocurrent microscopy to study the optoelectronic properties of the single heterojunctions. The measured photocurrent characteristics are consistent with an excess charge carrier transport through midgap trap states, which form at the Si/InAs heterojunctions. Namely, the trap states add an additional transport path across a heterojunction, and the charge of the defects changes the band bending at the junction. The bending gives rise to a photovoltaic effect at a small bias voltage. In addition, we observe a photoconductance effect within the InAs nanowires at large biases.