Single Domain Spin Manipulation by Electric Fields in Strain Coupled Artificial Multiferroic Nanostructures
Single Domain Spin Manipulation by Electric Fields in Strain Coupled Artificial Multiferroic Nanostructures
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DOI：
10.1103/physrevlett.111.027204
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发表时间：
2013-07-09
影响因子：
8.6
通讯作者：
Nolting, F.
中科院分区：
文献类型：
--
作者：
Buzzi, M.;Chopdekar, R. V.;Nolting, F.
我们证明在原位90度电场诱导均匀磁化旋转的单畴亚微米铁磁岛铁电单晶上生长的x射线光电子显微镜。实验结果与微磁学模拟结果吻合较好，表明铁磁纳米结构与铁电晶体之间的应变诱导磁电相互作用导致了铁电晶体的取向改变.具体地，铁电畴结构在确定结构对所施加的电场的响应中起关键作用，从而导致单畴岛的磁化行为的三种应变诱导机制。
We demonstrate in situ 90 degrees electric field-induced uniform magnetization rotation in single domain submicron ferromagnetic islands grown on a ferroelectric single crystal using x-ray photoemission electron microscopy. The experimental findings are well correlated with micromagnetic simulations, showing that the reorientation occurs by the strain-induced magnetoelectric interaction between the ferromagnetic nanostructures and the ferroelectric crystal. Specifically, the ferroelectric domain structure plays a key role in determining the response of the structure to the applied electric field, resulting in three strain-induced regimes of magnetization behavior for the single domain islands.