Intersubband absorption dynamics in coupled quantum wells
Intersubband absorption dynamics in coupled quantum wells
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DOI：
10.1063/1.1413728
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发表时间：
2001-10
影响因子：
4
通讯作者：
T. Müller;R. Bratschitsch;G. Strasser;K. Unterrainer
中科院分区：
文献类型：
--
作者：
T. Müller;R. Bratschitsch;G. Strasser;K. Unterrainer
利用带间泵浦/子带间探测技术，研究了非掺杂GaAsAlGaAs光激发后第一和第二子带中电子布居的时间演化。两个子带之间的间距小于纵向光学声子能量。亚带间吸收的时间依赖性可以用一个简单的速率方程模型来解释。当激发密度NS=2×10~(11)cm·τ~2时，得到T21=100ps的子带寿命和−=410ps的复合时间。
We apply an interband pump/intersubband probe technique to monitor the temporal evolution of the electron population in the first and second subband of an undoped GaAs/AlGaAs asymmetric double quantum well after interband optical excitation. The spacing between the two subbands is smaller than the longitudinal optical phonon energy. The time dependence of the intersubband absorption can be explained by a simple rate equation model. We extract an intersubband lifetime of T21=100 ps and a recombination time of τ=410 ps at an excitation density of nS=2×1011 cm−2.