Microscopic origin of thermal droop in blue-emitting InGaN/GaN quantum wells studied by temperature-dependent microphotoluminescence spectroscopy
Microscopic origin of thermal droop in blue-emitting InGaN/GaN quantum wells studied by temperature-dependent microphotoluminescence spectroscopy
复制标题
DOI：
10.1364/oe.428421
复制
发表时间：
2021-07-19
期刊：
影响因子：
3.8
通讯作者：
Kawakami, Yoichi
中科院分区：
文献类型：
--
作者：
Ishii, Ryota;Koyama, Yuji;Kawakami, Yoichi
为了阐明热下垂的微观起源，利用温度相关的微光致发光光谱研究了在外延横向生长的氮化镓上生长的蓝色发射铟镓（InGaN）量子阱。在300 K以下，样品表现出了众所周知的容位发光行为。然而，当温度从300 K升高到500 K时，翼区（螺纹位错密度较低）的近带边发射比种子区（螺纹位错密度较高）强，表明螺纹位错是热下垂的微观根源。考虑到载流子扩散长度，边缘型穿线位错对异质外延生长ingan基led的热下垂起主要作用。(C) 2021年美国光学学会根据OSA开放获取出版协议的条款
To elucidate the microscopic origin of the thermal droop, a blue-emitting indium gallium nitride (InGaN) quantum well grown on epitaxially laterally overgrown gallium nitride was investigated using temperature-dependent microphotoluminescence spectroscopy. Below 300 K, the sample exhibited a well-known dislocation-tolerant luminescence behavior. However, as temperature increases from 300 K to 500 K, the near band-edge emission at the wing region (with lower threading dislocation densities) was stronger than that at the seed region (with higher threading dislocation densities), indicating that threading dislocations are the microscopic origin of the thermal droop. Considering the carrier diffusion length, edge-type threading dislocations should play a major role in the thermal droop of heteroepitaxially grown InGaN-based LEDs. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement