Planar Hall sensors for micro-Hall magnetometry
Planar Hall sensors for micro-Hall magnetometry
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用于微霍尔磁力测量的平面霍尔传感器
DOI：
10.1063/1.1453338
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发表时间：
2002
影响因子：
3.2
通讯作者：
C. Meier
中科院分区：
文献类型：
--
作者：
M. Rahm;J. Raabe;Ralph Pulwey;Josef Biberger;W. Wegscheider;D. Weiss;C. Meier
在这项工作中，我们提出了一种用 GaAs·AlGaAs 异质结制造平面霍尔传感器的新方法，该方法可用于检查微米级磁体特定部分的局部杂散场。我们没有采用台面蚀刻，而是注入了能量为 1.5 keV 的氧离子，这会耗尽暴露区域下方的二维电子气，但使晶圆保持平坦。采用平面双霍尔交叉装置研究 30 nm 厚的电镀镍环，其外径和内径分别为 1.2 至 2 µm 和 0.3 至 1.6 µm。通过比较传感器两个霍尔交叉点的信号，我们可以区分局部杂散场变化和全局磁化模式的变化。在 110 K 温度下测量的磁滞回线表明磁化反转是通过磁涡流结构发生的。
In this work we present a new method to fabricate planar Hall sensors from GaAs� AlGaAs heterojunctions, which can be used to examine the local stray field at a specific section of a micron-sized magnet. Instead of mesa etching we implanted oxygen ions with an energy of 1.5 keV which deplete the two- dimensional electron gas underneath the exposed areas but leave the wafer flat. Planar double Hall cross devices were employed to investigate 30 nm thick electroplated Ni rings with outer and inner diameters ranging from 1.2 to 2 µm and from 0.3 to 1.6 µm, respectively. By comparing the signals from both Hall crosses of the sensor, we can distinguish between local stray field variations and changes of the global magnetization pattern. A hysteresis loop measured at a temperature of 110 K suggests that magnetization reversal occurs via a magnetic vortex structure.