Single InGaN nanodisk light emitting diodes as full-color subwavelength light sources
Single InGaN nanodisk light emitting diodes as full-color subwavelength light sources
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DOI：
10.1063/1.3597211
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发表时间：
2011-06
影响因子：
4
通讯作者：
Yu-Jung Lu;Hon-Way Lin;Hung‐Ying Chen;Yu-Chen Yang;S. Gwo
中科院分区：
文献类型：
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作者：
Yu-Jung Lu;Hon-Way Lin;Hung‐Ying Chen;Yu-Chen Yang;S. Gwo
具有空间、光谱和偏振控制能力的亚波长电致发光光源是光学成像和超衍射光刻的关键元件。在这里，我们证明了嵌入自组装GaN p-n纳米棒中的单个无应变InGaN纳米盘的电致发光可以覆盖整个可见光光谱，具有很大的线偏振比(∼0.85)。此外，这种独特的纳米棒中的纳米盘几何结构使超小占地面积的发光二极管(LED)能够用作亚波长光源。使用这些纳米发光二极管，我们能够通过控制曝光时间和选定波长下单个InGaN纳米盘的光强度来演示近场、亚波长光刻。
Subwavelength electroluminescent sources with spatial, spectral, and polarization controlling capabilities are critical elements for optical imaging and lithography beyond the diffraction limit. Here, we show that the electroluminescence from single, strain-free InGaN nanodisks embedded in self-assembled GaN p - n nanorods can span the entire visible spectrum with a large linear polarization ratio ( ∼ 0.85 ) . Furthermore, this unique nanodisk-in-nanorod geometry enables the realization of the ultrasmall footprint light-emitting diodes(LEDs) to be used as subwavelength light sources. Using these nano-LEDs, we are able to demonstrate near-field, subwavelength photolithography by controlling the exposure time and light intensity from single InGaN nanodisks at chosen wavelengths.