Compact high gain erbium-ytterbium doped waveguide amplifier fabricated by Ag-Na ion exchange
Compact high gain erbium-ytterbium doped waveguide amplifier fabricated by Ag-Na ion exchange
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DOI:
10.1049/el:20060555
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发表时间:
2006-05-25
影响因子:
1.1
通讯作者:
Laporta, R.
中科院分区:
文献类型:
--
作者:
Della Valle, G.;Taccheo, S.;Laporta, R.
A report is presented on an erbium-ytterbium doped waveguide amplifier fabricated by Ag-Na ion-exchange in a commercial phosphate glass substrate. The 31 mm-long active waveguide provides a maximum internal gain of 5.3 dB/cm at 1534 nm. The amplifier was fully characterised in terms of gain spectrum, noise figure, pump efficiency and gain saturation.