Evaluation of Line Edge Roughness in Nanoimprint Lithography Using Photocurable Polymer
Evaluation of Line Edge Roughness in Nanoimprint Lithography Using Photocurable Polymer
复制标题
使用光固化聚合物纳米压印光刻的线边缘粗糙度评估
DOI：
10.1143/jjap.42.3871
复制
发表时间：
2003
影响因子：
1.5
通讯作者：
I. Miyamoto
中科院分区：
文献类型：
--
作者：
Y. Kurashima;M. Komuro;H. Hiroshima;J. Taniguchi;I. Miyamoto
为了评估使用光固化树脂的纳米压印复制的最终精度，我们研究了使用通过各向异性湿法蚀刻产生的Si（110）衬底上的模具图案复制的图案的线边缘粗糙度（LER）。复制图案LER的均方根（RMS）在0.64 nm和0.9 nm之间。这比模具图案的尺寸略大。模具图案的RMS在0.48 nm和0.62 nm之间。当紫外线曝光剂量从10 mJ/cm 2增加到3 J/cm 2时，复制图案RMS没有显示出系统性变化。基于线边缘和Ti涂层树脂表面的RMS的依赖性，我们得出结论，在复制图案中的RMS的增量是由于Ti涂层进行了扫描电子显微镜观察的复制图案。
To evaluate the ultimate accuracy in nanoimprint replication using photocurable resin, we studied the line edge roughness (LER) of replicated patterns using a mold pattern on a Si (110) substrate produced by anisotropic wet etching. The root mean square (RMS) for the replicated pattern LER was between 0.64 nm and 0.9 nm. This was slightly larger than that for the mold pattern. The RMS for the mold pattern was between 0.48 nm and 0.62 nm. The replicated pattern RMS shows no systematic change when the ultraviolet light exposure dose is increased from 10 mJ/cm2 to 3 J/cm2. Based on the dependence of the RMS for both of the line edge and Ti coated resin surface, we concluded that the increment of the RMS in the replicated pattern is due to the Ti coating which was carried out for scanning electron microscope observation of the replicated pattern.