Tin Disulfide-An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics
Tin Disulfide-An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics
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DOI：
10.1021/nn504481r
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发表时间：
2014-10-01
期刊：
影响因子：
17.1
通讯作者：
Sutter, Peter
中科院分区：
文献类型：
--
作者：
Huang, Yuan;Sutter, Eli;Sutter, Peter
层状金属二硫属化物作为一系列单层和少层材料引起了人们极大的兴趣，这些材料显示出新的物理特性，并对器件应用感兴趣。在这里，我们报告了一个全面的特性的二硫化锡（SnS 2），一个新兴的半导体金属dichalcogenide，下降到单层的限制。使用片状剥落从层状块状晶体，我们建立的特点，单层和少层的SnS 2在光学和原子力显微镜，拉曼光谱和透射电子显微镜。带结构测量结合从头计算和光致发光光谱表明，SnS 2是一个间接的带隙半导体在整个厚度范围从散装到单层。场效应输运在SnS 2支持SiO2/Si表明主要散射中心在支持界面。超薄晶体管的开关电流比>10（6），载流子迁移率高达230 cm（2）/（V s），最小的滞后，以及由高k（去离子水）顶栅屏蔽的器件的接近理想的亚阈值摆动。二硫化锡晶体管是有效的光电探测器，但类似于其他金属二硫属化物，显示出相对缓慢的响应脉冲照射，可能是由于吸附诱导的长寿命的非本征陷阱状态。
Layered metal dichalcogenides have attracted significant interest as a family of single- and few-layer materials that show new physics and are of interest for device applications. Here, we report a comprehensive characterization of the properties of tin disulfide (SnS2), an emerging semiconducting metal dichalcogenide, down to the monolayer limit. Using flakes exfoliated from layered bulk crystals, we establish the characteristics of single- and few-layer SnS2 in optical and atomic force microscopy, Raman spectroscopy and transmission electron microscopy. Band structure measurements in conjunction with ab initio calculations and photoluminescence spectroscopy show that SnS2 is an indirect bandgap semiconductor over the entire thickness range from bulk to single-layer. Field effect transport in SnS2 supported by SiO2/Si suggests predominant scattering by centers at the support interface. Ultrathin transistors show on-off current ratios >10(6), as well as carrier mobilities up to 230 cm(2)/(V s), minimal hysteresis, and near-ideal subthreshold swing for devices screened by a high-k (deionized water) top gate. SnS2 transistors are efficient photodetectors but, similar to other metal dichalcogenides, show a relatively slow response to pulsed irradiation, likely due to adsorbate-induced long-lived extrinsic trap states.