Physical Modeling of Fast p-i-n Diodes With Carrier Lifetime Zoning, Part I: Device Model
Physical Modeling of Fast p-i-n Diodes With Carrier Lifetime Zoning, Part I: Device Model
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具有载流子寿命分区的快速 p-i-n 二极管的物理建模，第 I 部分：器件模型
DOI：
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发表时间：
2008
影响因子：
6.7
通讯作者：
J. Hudgins
中科院分区：
文献类型：
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作者：
A. Bryant;Liqing Lu;E. Santi;P. Palmer;J. Hudgins
本文介绍了一个基于物理的二极管模型的开发和实现，该模型可以模拟高压二极管在穿通过程中的快速恢复以及由于局部寿命控制而修正的载流子密度分布。它使用傅立叶级数解来求解轻掺杂基区的双极扩散方程。将该模型与有限元器件模拟结果进行了比较。第二部分提出了一种寿命控制二极管的参数提取方法。
This paper presents the development and implementation of a physics-based diode model which can simulate aspects of high-voltage diodes such as snappy recovery during punch-through and the modified carrier density profile due to local lifetime control. It uses a Fourier series solution for the ambipolar diffusion equation in the lightly doped base region. The model is compared with finite-element device simulations. A parameter extraction procedure for the diode with lifetime control is proposed in Part II.