Metallic Quantum Well States in Artificial Structures of Strongly Correlated Oxide
Metallic Quantum Well States in Artificial Structures of Strongly Correlated Oxide
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DOI：
10.1126/science.1205771
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发表时间：
2011-07
期刊：
影响因子：
56.9
通讯作者：
K. Yoshimatsu;K. Horiba;H. Kumigashira;H. Kumigashira;T. Yoshida;A. Fujimori;M. Oshima
中科院分区：
文献类型：
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作者：
K. Yoshimatsu;K. Horiba;H. Kumigashira;H. Kumigashira;T. Yoshida;A. Fujimori;M. Oshima
钒酸锶超薄膜显示出电子子带的复杂演化。人工结构中强相关电子的量子限制为研究相关费米液体态在降维中的行为提供了一个平台。我们报告了在 Nb:SrTiO3 基底上生长的 SrVO3 超薄膜中二维电子液体态的创建和控制，这些薄膜是人造氧化物结构，可以通过单个单层改变厚度。 SrVO3/Nb:SrTiO3 样品的角分辨光发射显示了金属量子阱态，这些态可以通过众所周知的相移量子化规则充分描述。在 SrVO3 超薄膜中观察到的量子阱态表现出独特的特征，例如源自 V 3d 态各向异性轨道特征的轨道选择性量子化以及费米能级附近子带的异常能带重整化，这些特征反映了量子阱中复杂的相互作用。
Ultrathin films of strontium vanadate display a complex evolution of electronic subbands. The quantum confinement of strongly correlated electrons in artificial structures provides a platform for studying the behavior of correlated Fermi-liquid states in reduced dimensions. We report the creation and control of two-dimensional electron-liquid states in ultrathin films of SrVO3 grown on Nb:SrTiO3 substrates, which are artificial oxide structures that can be varied in thickness by single monolayers. Angle-resolved photoemission from the SrVO3/Nb:SrTiO3 samples shows metallic quantum well states that are adequately described by the well-known phase-shift quantization rule. The observed quantum well states in SrVO3 ultrathin films exhibit distinctive features—such as orbital-selective quantization originating from the anisotropic orbital character of the V 3d states and unusual band renormalization of the subbands near the Fermi level—that reflect complex interactions in the quantum well.