Biased FeTaC(N) soft underlayers for perpendicular media
Biased FeTaC(N) soft underlayers for perpendicular media
复制标题
用于垂直介质的偏置 FeTaC(N) 软衬层
DOI：
10.1063/1.1558090
复制
发表时间：
2003
影响因子：
3.2
通讯作者：
R. Jiang
中科院分区：
文献类型：
--
作者：
C. Lai;R. Jiang
研究了反应溅射法制备的FeTaCN薄膜在垂直介质软衬层中的应用。当N2/Ar比为5%时，FeTaCN纳米晶薄膜具有高的饱和磁矩（Bs= 1.63T）和低的矫顽力（1.4Oe）。研究了IrMn/FeTaCN交换偏置多层膜和CoSm/FeTaCN硬偏置膜对FeTaCN膜畴结构和磁化反转的控制。在[IrMn（8 mm）/FeTaCN（50 nm）]×4的叠层样品中，交换偏置场与FeTaCN薄膜的厚度成反比，达到11.4 Oe。IrMn和FeTaCN之间的界面耦合能为0.09 erg/cm ~ 2。CoSm/FeTaCN的偏置场在FeTaCN厚度为200 nm时可达到最大值10.6 Oe。相应的FeTaCN/CoSm的界面耦合能高达0.27 erg/cm ~ 2。
FeTaCN films, prepared by using reactive sputtering, were studied for the application for soft underlayers of perpendicular media. As-deposited FeTaCN nanocrystalline films with a N2/Ar ratio of 5% exhibited high saturation moment (Bs=1.63 T) and low coercivity (1.4 Oe). IrMn/FeTaCN exchange-biased multilayer films and CoSm/FeTaCN hard-biased films were investigated to control the domain structure and magnetization reversal in FeTaCN films. Exchange bias field is inversely proportional to the thickness of FeTaCN films and reaches 11.4 Oe in the laminated sample of [IrMn (8 mm)/FeTaCN (50 nm)]×4. The interfacial coupling energy between IrMn and FeTaCN is 0.09 erg/cm2. The biasing field of CoSm/FeTaCN can reach a maximum value of 10.6 Oe at the FeTaCN thickness of 200 nm. The corresponding interfacial coupling energy of FeTaCN/CoSm is as large as 0.27 erg/cm2.