Programmable Spin Logic Based on Spin Hall Effect in a Single Device
Programmable Spin Logic Based on Spin Hall Effect in a Single Device
复制标题
单个器件中基于自旋霍尔效应的可编程自旋逻辑
DOI：
10.1002/aelm.201600282
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发表时间：
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影响因子：
6.2
通讯作者：
Xiufeng Han
中科院分区：
文献类型：
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作者：
Caihua Wan;Xuan Zhang;Zhonghui Yuan;Chi Fang;Wenjie Kong;Qintong Zhang;Hao Wu;Usman Khan;Xiufeng Han
自旋逻辑器件由于其可编程性和非易失性，被认为是下一代电子产品的理想构建块。尽管已经提出了几种基于磁壁运动的自旋逻辑、自旋场效应晶体管和由磁性纳米粒子构成的自动机，但仍迫切需要一种具有可扩展性、能效和与现有互补金属氧化物半导体技术兼容的体系结构。实验证明，具有垂直各向异性的磁性薄膜中的自旋霍尔效应可以用来构造这样的自旋逻辑器件。在一个器件中实现了五个非易失性的常用逻辑门。这一演示可能为自旋电子学在不久的将来在逻辑电路和存储器行业中的应用铺平道路，甚至可能催生内存中逻辑计算体系结构。
Spin logic devices, due to their programmability and nonvolatility, are deemed as an ideal building block for the next generation of electronics. Though several types of spin logic based on domain wall motion, spin-field-effect transistor and automata made of magnetic nanoparticles have been proposed, an architecture with scalability, energy efficiency and compatibility with current complementary metal-oxide-semiconductor technology is still in urgent demand. Here, it is experimentally demonstrated that the spin Hall effect in magnetic films with perpendicular anisotropy can be utilized to construct such a spin logic device. Five commonly used logic gates with nonvolatility in a single device are realized. This demonstration could pave the way towards application of spintronics in logic circuits as well as the memory industry in the near future and could even give birth to logic-in-memory computing architectures.