Epitaxial Mn2Au thin films for antiferromagnetic spintronics
Epitaxial Mn2Au thin films for antiferromagnetic spintronics
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DOI：
10.1088/0022-3727/48/38/385001
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发表时间：
2015-09-30
影响因子：
3.4
通讯作者：
Klaeui, M.
中科院分区：
文献类型：
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作者：
Jourdan, M.;Braeuning, H.;Klaeui, M.
Mn_2Au是少数几种反铁磁自旋电子学的候选材料之一，需要具有高Neel温度和强自旋轨道耦合的有序金属。本文报道了用射频溅射法制备外延Mn_2Au薄膜。通过X射线和电子衍射的结构表征证明了高度的原子有序性，并且电阻率的温度依赖性对于良好的金属是典型的。通过对Mn_2Au/Fe双层膜的研究，研究了样品的磁性。交换偏置效应的观察，这提出了强有力的证据，反铁磁秩序的Mn 2Au薄膜。在交换耦合Fe薄膜中可见类似于500 nm的小区域。
Mn2Au is one of the few candidate materials for antiferromagnetic spintronics requiring ordered metals with a high Neel-temperature and strong spin-orbit coupling. We report the preparation of epitaxial Mn2Au thin films by rf-sputtering. Structural characterization by x-ray and electron diffraction demonstrates a high degree of atomic order and the temperature dependence of the resistivity is typical for a good metal. The magnetic properties of the samples are studied by the investigation of Mn2Au/Fe bilayers. Exchange bias effects are observed, which present strong evidence for antiferromagnetic order in the Mn2Au thin films. Small domains of similar to 500 nm are visualized in the exchange coupled Fe thin film.