Open-Source Memory Compiler for Automatic RRAM Generation and Verification
Open-Source Memory Compiler for Automatic RRAM Generation and Verification
复制标题
用于自动 RRAM 生成和验证的开源内存编译器
DOI：
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发表时间：
2021
期刊：
影响因子：
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通讯作者：
T. Constandinou
中科院分区：
文献类型：
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作者：
D. Antoniadis;Peilong Feng;A. Mifsud;T. Constandinou
学术界缺乏开源内存编译器通常会导致研究和设计实现的严重延迟。本文介绍了一种开源内存编译器，它使用 Mentor Graphics (Calibre) 提供的物理验证工具直接集成到 Cadence Virtuoso 环境中。它促进了从网表生成到布局实现以及物理实现验证的整个存储器生成过程。据我们所知，这是第一个专门为自动生成电阻随机存取存储器（RRAM）而开发的开源内存编译器。 RRAM 有望实现高速、高密度和非易失性。此外还提出了一种新颖的 RRAM 架构，并对许多生成的 RRAM 阵列进行了评估，以确定其最坏情况控制线寄生效应以及其单元忆阻器上最坏情况的稳定时间。 SEL、N 和 P 线的总电容分别为 5.83 fF/cell、3.31 fF/cell 和 2.48 fF/cell，而 N 线和 P 线的 SEL 总计算电阻分别为 1.28 Ω/cell 和 0.14 Ω/cell。
The lack of open-source memory compilers in academia typically causes significant delays in research and design implementations. This paper presents an open-source memory compiler that is directly integrated within the Cadence Virtuoso environment using physical verification tools provided by Mentor Graphics (Calibre). It facilitates the entire memory generation process from netlist generation to layout implementation, and physical implementation verification. To the best of our knowledge, this is the first open-source memory compiler that has been developed specifically to automate Resistive Random Access Memory (RRAM) generation. RRAM holds the promise of achieving high speed, high density and non-volatility. A novel RRAM architecture, additionally is proposed, and a number of generated RRAM arrays are evaluated to identify their worst case control line parasitics and worst case settling time across the memristors of their cells. The total capacitance of lines SEL, N and P is 5.83 fF/cell, 3.31 fF/cell and 2.48 fF/cell respectively, while the total calculated resistance for SEL is 1.28 Ω/cell and 0.14 Ω/cell for both N and P lines.