Diode-pumped passively Q-switched picosecond microchip lasers.
Diode-pumped passively Q-switched picosecond microchip lasers.
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DOI：
10.1364/ol.19.001427
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发表时间：
1994-09
期刊：
影响因子：
3.6
通讯作者：
J. Zayhowski;C. Dill
中科院分区：
文献类型：
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作者：
J. Zayhowski;C. Dill
用Nd（3+）：YAG薄片与Cr（4+）：YAG薄片键合，制成了1.064微米被动调Q微片激光器。当用光纤耦合二极管的未聚焦的1.2W输出泵浦时，这些器件在单频TEM（00）模式下以6 kHz的脉冲重复率产生持续时间为337 ps的11微J脉冲。激光器的峰值功率超过180 MW/cm（2）。
Passively Q-switched 1.064-microm microchip lasers have been constructed from thin pieces of Nd(3+):YAG bonded to thin pieces of Cr(4+):YAG. When pumped with the unfocused 1.2-W output of a fiber-coupled diode, these devices produced 11-microJ pulses of 337-ps duration at a pulse repetition rate of 6 kHz in a single-frequency TEM(00) mode. The peak power of the lasers was in excess of 180 MW/cm(2).