Energy-Level Engineering in Self-Contact Organic Transistors Prepared by Inkjet Printing
Energy-Level Engineering in Self-Contact Organic Transistors Prepared by Inkjet Printing
复制标题
喷墨印刷制备的自接触有机晶体管的能级工程
DOI：
10.1021/jp5070819
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发表时间：
2014
期刊：
影响因子：
3.7
通讯作者：
T. Mori,*
中科院分区：
文献类型：
--
作者：
T. Kadoya;S. Tamura;T. Mori,*
具有化学掺杂的源极/漏极电极的有机场效应晶体管通过使用喷墨印刷将有源层选择性地转化为导电材料、有机电荷转移（CT）复合物来制造。通过X射线衍射和拉曼光谱研究CT复合物的形成，并且所得CT复合物具有足够的导电性以实现令人满意的晶体管性能。油墨的溶剂是实现最佳化学掺杂以形成有序CT复合物的关键因素。以这种方式，我们可以获得显著降低电极/半导体界面处的肖特基势垒的特定于半导体的电极，因为在相同类型的分子之间自动获得理想的能级工程。
Organic field-effect transistors with chemically doped source/drain electrodes are fabricated by selectively transforming the active layer to the conducting material, organic charge-transfer (CT) complex, using inkjet printing. The formation of the CT complex is investigated by X-ray diffraction and Raman spectroscopy, and the resulting CT complex is conducting enough to realize satisfactory transistor performance. The solvent of the ink is a key factor to achieve the optimal chemical doping to form a well-ordered CT complex. In such a manner, we can obtain semiconductor-specific electrodes that significantly reduce the Schottky barrier at the electrode/semiconductor interface, because ideal energy-level engineering is automatically attained between the same type of molecules.