Tritium Decontamination from Co-deposited Layer on Tungsten Substrate by Ultra Violet Lamp and Laser
Tritium Decontamination from Co-deposited Layer on Tungsten Substrate by Ultra Violet Lamp and Laser
复制标题
紫外灯和激光对钨基共沉积层氚去污
DOI：
10.1080/18811248.2001.9715124
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发表时间：
2001
影响因子：
1.2
通讯作者：
M. Nishi
中科院分区：
文献类型：
--
作者：
Y. Oya;T. Tadokoro;W. Shu;T. Hayashi;S. O’hira;M. Nishi
使用紫外线 (UV) 灯和激光进行氚净化。通过C2H2或C2D2辉光放电在钨基底上沉积模拟共沉积层。用氙准分子灯（172 nm）或ArF准分子激光器（193 nm）发出的紫外光照射共沉积层，并通过质谱仪评估原位去污行为。紫外线照射后，通过弹性反冲检测分析（ERDA）评估共沉积层中的氢浓度，并通过二次离子质谱（SIMS）分析深度剖面。对于C2D2辉光放电形成的共沉积层，发现在UV灯照射期间主要释放M/e 3 (HD)气体，而在UV激光照射期间同时检测到M/e 3 (HD)和M/e 4 (D2)气体。虽然紫外灯照射没有去除共沉积层，但紫外激光照射1分钟内几乎所有的共沉积层被去除。通过ERDA估计共沉积层中的氢与碳的比率为0.53，并且通过SIMS测量计算出去除1μm厚的共沉积层所需的光子数为3.7×1018cm-2。结论是，共沉积层上的C-H(C-D)键通过UV灯的照射而解离，而共沉积层本身通过UV激光照射而被去除。
Tritium decontamination using ultra violet (UV) lamp and laser was performed. Simulated co-deposited layer on tungsten substrate was deposited by C2H2 or C2D2 glow discharge. The co-deposited layer was irradiated to UV lights from a xenon excimer lamp (172 nm) or ArF excimer laser (193 nm) and the in-situ decontamination behavior was evaluated by a mass spectrometer. After the UV irradiation, the hydrogen concentration in the co-deposited layer was evaluated by elastic recoil detection analysis (ERDA) and the depth profile was analyzed by secondary ion mass spectrometry (SIMS). For the co-deposited layer formed by C2D2 glow discharge, it was found that M/e 3 (HD) gas was released mainly during the UV lamp irradiation while both M/e 3 (HD) and M/e 4 (D2) gases were detected during the UV laser irradiation. Though the co-deposited layer was not removed by UV lamp irradiation, almost all the co-deposited layer was removed by UV laser irradiation within 1 min. The ratio of hydrogen against carbon in the co-deposited layer was estimated to be 0.53 by ERDA and the number of photon needed for removing 1 fim thick co-deposited layer was calculated to be 3.7×1018 cm-2 for the UV laser by SIMS measurement. It is concluded that C-H (C-D) bond on the co-deposited layer were dissociated by irradiation of UV lamp while the co-deposited layer itself was removed by the UV laser irradiation.