Selective fabrication of p-type and n-type thermoelectric micropatterns by the reduction of CuO/NiO mixed nanoparticles using femtosecond laser pulses
Selective fabrication of p-type and n-type thermoelectric micropatterns by the reduction of CuO/NiO mixed nanoparticles using femtosecond laser pulses
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DOI：
10.1007/s00339-017-1489-x
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发表时间：
2018-01-01
影响因子：
2.7
通讯作者：
Hata, Seiichi
中科院分区：
文献类型：
--
作者：
Mizoshiri, Mizue;Hata, Seiichi
利用飞秒激光脉冲对CuO/NiO混合纳米粒子进行还原和再氧化，选择性地制备了p型和n型热电微图案。通过光栅扫描聚焦飞秒激光脉冲在含有CuO和NiO纳米颗粒、乙二醇和聚乙烯吡咯烷酮的溶液膜上形成微图案，然后去除未照射的纳米颗粒。在激光扫描速度为5 ~ 20 mm/s、激光能量密度为0.055 J/cm（2）的条件下，通过还原烧结CuO/NiO混合纳米粒子制备Cu-Ni合金。相反，在以1 mm/s的扫描速度形成的微图案的X射线衍射光谱中观察到对应于Cu 2 O和NiO的强峰，表明通过还原金属的再氧化产生了Cu 2 O和NiO。在能量密度为0.055J/cm（2）、扫描速度为5-20 mm/s时形成的微图形的塞贝克系数在-32 ~-16 μ V/K之间，而在能量密度为0.055J/cm（2）、扫描速度为1 mm/s时形成的微图形的塞贝克系数与250 μ V/K相近。这些结果表明，Seebeck系数取决于生成的n型Cu-Ni和p型Cu 2 O和NiO相。通过选择性地制作p型和n型热电元件来制作热电偶。热电偶的热电电压为0.25 mV/K时，其热端和冷端之间施加的温度梯度。所产生的电压与基于塞贝克系数的估计电压几乎一致。所开发的选择性制造过程预计将是有用的热电型传感器的直接写入。
p-type and n-type thermoelectric micropatterns were selectively fabricated via the reduction and reoxidation of CuO/NiO mixed nanoparticles using femtosecond laser pulses. The micropatterns were formed by raster scanning focused femtosecond laser pulses on a solution film containing CuO and NiO nanoparticles, ethylene glycol, and polyvinylpyrrolidone, followed by the removal of the non-irradiated nanoparticles. Cu-Ni was generated by reductive sintering of the CuO/NiO mixed nanoparticles at laser scanning speeds ranging from 5 to 20 mm/s and a laser fiuence of 0.055 J/cm(2). In contrast, intense peaks corresponding to Cu2O and NiO were observed in the X-ray diffraction spectrum of the micropattern formed at a scanning speed of 1 mm/s, indicating that Cu2O and NiO were generated via the reoxidation of the reduced metals. The Seebeck coefficients of the micropatterns formed at a fiuence of 0.055 J/cm(2) and scanning speeds of 5-20 mm/s were between-32 and -16 mu V/K, whereas that of the micropattern formed at a fiuence of 0.055 J/cm(2) and scanning speed of 1 mm/s was similar to 250 mu V/K. These results suggest that the Seebeck coefficient depends on the generated n-type Cu-Ni and p-type Cu2O and NiO phases. A thermoelectric couple was fabricated by selectively fabricating p-type and n-type thermoelectric elements. The thermoelectric couple exhibited a thermoelectric voltage of 0.25 mV/K when a temperature gradient was applied between its hot and cold sides. The generated voltage was nearly consistent with the estimated voltage based on the Seebeck coefficient. The developed process for selective fabrication is expected to be useful for the direct writing of thermoelectric-type sensors.