Scanning probe investigation of surface charge and surface potential of GaN-based heterostructures
Scanning probe investigation of surface charge and surface potential of GaN-based heterostructures
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DOI：
10.1063/1.1869535
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发表时间：
2005-03-14
影响因子：
4
通讯作者：
Gruverman, A
中科院分区：
文献类型：
--
作者：
Rodriguez, BJ;Yang, WC;Gruverman, A
用扫描开尔文探针显微镜(SKPM)和静电力显微镜(EFM)测量了GaN横向极性异质结(LPH)的Ga面和N面的表面电势和表面电荷密度。表面进行了盐酸表面处理，以解决吸附电荷在极化屏蔽中的作用。结果表明，当表面处理不影响Ga面时，N面的吸附屏蔽电荷密度增加(1.6+/-0.5×10(10)cm(-2))，N面和Ga面之间的表面电势差减小0.3+/-0.1V。(C)2005年美国物理研究所。
Scanning Kelvin probe microscopy (SKPM) and electrostatic force microscopy (EFM) have been employed to measure the surface potentials and the surface charge densities of the Ga- and the N-face of a GaN lateral polarity heterostructure (LPH). The surface was subjected to an HCl surface treatment to address the role of adsorbed charge on polarization screening. It has been found that while the Ga-face surface appears to be unaffected by the surface treatment, the N-face surface exhibited an increase in adsorbed screening charge density (1.6 +/- 0.5x10(10) cm(-2)), and a reduction of 0.3 +/- 0.1 V in the surface potential difference between the N- and Ga-face surfaces. (C) 2005 American Institute of Physics.