Resonance Raman scattering from defects in CdSe.
Resonance Raman scattering from defects in CdSe.
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DOI：
10.1103/physrevb.35.4345
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发表时间：
1987-03
期刊：
影响因子：
--
通讯作者：
Arora;Ramdas
中科院分区：
文献类型：
--
作者：
Arora;Ramdas
本文研究了A激子跃迁区的共振拉曼散射。在182、195和208 cm− 1处观察到三条新的拉曼谱线，在适当的共振条件下，它们甚至比由纵向光学（LO）声子引起的谱线更强。在182和195 cm− 1处的模式在1.8206 eV处显示共振增强，而在208 cm− 1处的模式和LO声子在1.8222 eV处显示最大强度。偏振发光光谱表明，这些能量对应于激子绑定到两个不同的施主具有不同的网站对称性。在182和195 cm-1处的峰归属于来自不具有晶格的完全对称性的施主络合物的能级的电子拉曼散射。讨论了208 cm-1模的可能机制。
Resonance Raman scattering (RRS) in CdSe is investigated in the region of the A excitonic transition. Three new Raman lines at 182, 195, and 208 cm− 1 are observed which become stronger than even the line due to the longitudinal optic (LO) phonon under appropriately resonant conditions. The modes at 182 and 195 cm− 1 show resonant enhancement at 1.8206 eV whereas the mode at 208 cm− 1 and the LO phonon exhibit maximum intensity at 1.8222 eV. The polarized luminescence spectra show that these energies correspond to the excitons bound to two different donors having different site symmetries. The peaks at 182 and 195 cm− 1 are assigned to electronic Raman scattering from the levels of a donor complex which does not have the full symmetry of the lattice. Possible mechanisms for the mode at 208 cm− 1 are discussed.