Theoretical estimate of the low-energy limit to ion channeling
Theoretical estimate of the low-energy limit to ion channeling
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DOI：
10.1016/0168-583x(96)00175-9
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发表时间：
1996-07-01
影响因子：
1.3
通讯作者：
Hobler, G
中科院分区：
文献类型：
--
作者：
Hobler, G
根据标准的沟道理论，不可能存在沟道的“随机方向”沿着。这显然与实验证据不符。为了消除这种差异，提出了一种改进的沟道理论。在该理论中，考虑了与通道相邻的所有行或平面。通过临界接近距离等于通道半径的条件，为每个通道定义了沟道的低能量极限。因此，在给定的能量下，只有有限数量的通道是活动的。从用精确理论计算的临界角构建沟道图，并与实验获得的图（Si中的He）或通过二元碰撞模拟（Si中的P）获得的图进行比较。优秀的协议被发现，特别是当考虑完全失败的标准沟道理论。
According to the standard channeling theory ''random directions'' along which channeling is impossible should not exist. This clearly disagrees with experimental evidence. In order to eliminate the discrepancy, a refined channeling theory is presented. In this theory all rows or planes neighboring the channel are considered. A low-energy limit to channeling is defined for each channel by the condition that the critical approach distance equals the channel radius. Thus, at a given energy only a limited number of channels is active. From the critical angles calculated with the refined theory channeling maps are constructed and compared with maps obtained experimentally (He in Si) or by binary collision simulations (P in Si). Excellent agreement is found, especially when considering the complete failure of the standard channeling theory.