Short channel field-effect transistors from highly enriched semiconducting carbon nanotubes
Short channel field-effect transistors from highly enriched semiconducting carbon nanotubes
复制标题
DOI：
10.1007/s12274-012-0219-0
复制
发表时间：
2012-05
期刊：
影响因子：
9.9
通讯作者：
J. Wu;Liming Xie;Guosong Hong;HongEn Lim;Boanerges Thendie;Y. Miyata;H. Shinohara;H. Dai
中科院分区：
文献类型：
--
作者：
J. Wu;Liming Xie;Guosong Hong;HongEn Lim;Boanerges Thendie;Y. Miyata;H. Shinohara;H. Dai
通过对直径在 1.2-1.6 nm 范围内的电弧放电生长的 SWNT 进行凝胶过滤，获得了纯度约为 98% 的半导体单壁碳纳米管 (s-SWNT)。多激光拉曼光谱证实，富含 s-SWNT 的样品中存在不到 2% 的金属 SWNT (m-SWNT)。对沟道长度为 200 nm 的 Pd 接触装置中约 50 个单独管的测量显示，开/关比 >104，电导为 1.38–5.8 μS，迁移率在 40–150 cm2·V/s 范围内。由于残留的 m-SWNT，具有约 100 个管的短通道多管器件显示出较低的开/关比，尽管相对于由单个管制成的器件，导通电流大大增加。
Semiconducting single-walled carbon nanotubes (s-SWNTs) with a purity of ∼98% have been obtained by gel filtration of arc-discharge grown SWNTs with diameters in the range 1.2–1.6 nm. Multi-laser Raman spectroscopy confirmed the presence of less than 2% of metallic SWNTs (m-SWNTs) in the s-SWNT enriched sample. Measurement of ∼50 individual tubes in Pd-contacted devices with channel length 200 nm showed on/off ratios of >104, conductances of 1.38–5.8 μS, and mobilities in the range 40–150 cm2·V/s. Short channel multi-tube devices with ∼100 tubes showed lower on/off ratios due to residual m-SWNTs, although the on-current was greatly increased relative to the devices made from individual tubes.