Preparation and optical spectroscopy of Eu3+-doped GaN luminescent semiconductor from freeze-dried precursors
Preparation and optical spectroscopy of Eu3+-doped GaN luminescent semiconductor from freeze-dried precursors
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冻干前驱体制备 Eu3+ 掺杂 GaN 发光半导体及其光谱
DOI：
10.1016/j.jssc.2004.08.004
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发表时间：
2004
影响因子：
3.3
通讯作者：
V. D. Rodríguez
中科院分区：
文献类型：
--
作者：
Abdelouahad El;D. Pérez;P. Núñez;I. R. Martín;V. Lavín;V. D. Rodríguez
通过氨解相应的冷冻干燥前体制备了纯的和0.5%和5mol%Eu ~（3+）掺杂的GaN纳米颗粒。通过X射线粉末衍射确定，获得了具有纤锌矿结构的单一六方相。XRD分析表明，微晶尺寸小于10 nm。从光谱表征中发现，使用硝酸盐作为起始试剂可以避免Eu 2 O3的形成。荧光线窄化光谱显示激发波长依赖性，这表明Eu 3+离子在制备的样品中分散良好。通过晶场计算分析了Eu 3+离子所占据的环境分布，并与其他材料的结果进行了比较。
Pure and 0.5% and 5mol% Eu3+doped GaN nanoparticles have been prepared by ammonolysis of the corresponding freeze-dried precursors. A single hexagonal phase with the wurtzite structure was obtained as determined by X-ray Powder Diffraction. The crystallite size determined by XRD was lower than 10nm. From optical spectroscopy characterization, it is found that the Eu2O3formation is avoided by using nitrates as starting reagent. Fluorescence line narrowing spectra show excitation wavelength dependence, which is indicative that the Eu3+ions are well dispersed in the prepared samples. The environment distribution occupied by the Eu3+ions has been analyzed by crystal-field calculation and the results are compared with those for other materials.