Microcrystalline silicon-germanium solar cells for multi-junction structures
Microcrystalline silicon-germanium solar cells for multi-junction structures
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DOI：
10.1016/s0927-0248(02)00069-7
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发表时间：
2002-10
影响因子：
6.9
通讯作者：
M. Isomura;K. Nakahata;M. Shima;S. Taira;K. Wakisaka;Makoto Tanaka;S. Kiyama
中科院分区：
文献类型：
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作者：
M. Isomura;K. Nakahata;M. Shima;S. Taira;K. Wakisaka;Makoto Tanaka;S. Kiyama
Microcrystalline silicon–germanium (μc-SiGe) solar cells were investigated for a unit cell of multi-junction structures. Despite having a thinner μc-SiGe layer of 0.5μm, a conversion efficiency of 5.6% (the highest value ever reported for μc-SiGe solar cells) was achieved by using a μc-SiGe film with 20% Ge concentration. A short-circuit current (Isc) of 28mA/cm2was obtained in the case of 27% Ge concentration. This is higher than the Iscof the best μc-Si solar cells with 2μm thickness. The collection efficiency spectrum shows more than 20% at 1000nm, and sensitivity is observed in wavelengths up to 1200nm. The results suggest that a reduction in the thickness of microcrystalline solar cells may achieve higher productivity, and the utilization of longer wavelength light allows us to obtain higher efficiency.
