Improvement of Film Quality in CuInSe2 Thin Films Fabricated by a Non-Vacuum
Improvement of Film Quality in CuInSe2 Thin Films Fabricated by a Non-Vacuum
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非真空制备 CuInSe2 薄膜薄膜质量的提高
DOI：
10.1143/jjap.50.04dp12
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
and M. Konagai
中科院分区：
文献类型：
--
作者：
Y. Zhang;M. Ito;T. Tamura;A. Yamada;and M. Konagai
为了提高非真空纳米颗粒法制备CuInSe 2（CIS）薄膜的质量，本研究对两类纳米颗粒：Cu（InGa）Se 2（CIGS）纳米颗粒和硒化铜（Cu-Se）与硒化铟（In-Se）纳米颗粒进行了研究。结果表明，含In-Se纳米颗粒的Cu-Se比CIGS纳米颗粒具有更高的晶化速度。由Cu-Se和In-Se纳米颗粒获得的薄膜具有更高的结晶度和更大的晶粒尺寸。在硒化过程中，噻吩作为烧结添加剂应用。结果表明，硫脲的加入对晶粒生长和致密CIS层的形成是非常有效的。在空气质量1.5照射下测量电池性能。用Cu-Se、In-Se纳米粒子和硫脲制备的太阳能电池的效率为2.15%，高于用CIGS纳米粒子制备的太阳能电池的效率0.28%。
To improve the quality of CuInSe 2 (CIS) thin films fabricated by a non-vacuum, nanoparticle-based approach, in this study, two categories of nanoparticles, Cu (InGa) Se 2 (CIGS) nanoparticles and copper selenide (Cu–Se) with indium selenide (In–Se) nanoparticles are investigated. It is found that the Cu–Se with In–Se nanoparticles show a higher crystallization velocity than CIGS nanoparticles. The films obtained from Cu–Se with In–Se nanoparticles exhibit higher crystallinity with a larger grain size. Thiourea is applied as a sintering additive during the selenization process. It is clarified that the addition of thiourea is very effective for grain growth and the fabrication of a dense CIS layer. The cell performance is measured under Air Mass 1.5 irradiation. The efficiency of the solar cell, fabricated using Cu–Se, In–Se nanoparticles with thiourea, is 2.15%, higher than that of the solar cell fabricated using CIGS nanoparticles, which is 0.28%.