Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes
Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes
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DOI：
10.1109/jqe.2011.2159194
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发表时间：
2011-06
影响因子：
2.5
通讯作者：
P. Ker;A. Marshall;A. Krysa;J. David;C. Tan
中科院分区：
文献类型：
--
作者：
P. Ker;A. Marshall;A. Krysa;J. David;C. Tan
在77 ~ 290 K温度范围内，测量和分析了InAs雪崩光电二极管体漏电流和表面漏电流的温度特性。在单位增益下，SU-8钝化的InAs光电二极管具有低暗电流密度，在290 K下为100 mA/cm 2，在77 K下为150 nA/cm 2。在290 K和77 K下分别在13 V和19.5 V下测得雪崩倍增因子为25。光电二极管表现出动态电阻-面积积，在0.1 V下计算，290 K时为34 Ω-cm 2，77 K时为910 MΩ-cm 2。我们的分析表明，在200 K和290 K的温度之间，体漏电流与ni 2成正比，而表面漏电流与ni成正比，从77 K到290 K，其中ni是本征载流子浓度。推导出的激活能分别为0.36 eV和0.18 eV，表明扩散为主的体电流和产生和复合为主的表面电流。
Measurement and analysis of the temperature dependence of bulk and surface leakage currents in InAs avalanche photodiodes have been performed between 77 K and 290 K. At unity gain, SU-8 passivated InAs photodiodes have low dark current densities of 100 mA/cm2 at 290 K and 150 nA/cm2 at 77 K. An avalanche multiplication factor of 25 was measured at 13 V and 19.5 V at 290 K and 77 K, respectively. The photodiodes exhibit dynamic resistance-area products, calculated at 0.1 V of 34 Ω-cm2 at 290 K and 910 MΩ-cm2 at 77 K. Our analysis showed that between the temperatures of 200 K and 290 K, the bulk leakage current is proportional to ni2 whereas the surface leakage current is proportional to ni from 77 K to 290 K, where ni is the intrinsic carrier concentration. The activation energies deduced were 0.36 eV and 0.18 eV suggesting diffusion dominated bulk current and generation and recombination dominated surface current.