Electrical activity of carbon-hydrogen centers in Si
Electrical activity of carbon-hydrogen centers in Si
复制标题
Si 中碳氢中心的电活动
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
S. Öberg
中科院分区：
文献类型：
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作者：
O. Andersen;A. Peaker;L. Dobaczewski;K. B. Nielsen;B. Hourahine;R. Jones;P. Briddon;S. Öberg
硅中 Cs-H 缺陷的电活性已通过联合建模和实验研究进行了研究。采用单轴应力技术的高分辨率拉普拉斯电容谱测量了应力-能量张量，并将结果与理论模型进行了比较。在低温下，注入的 H 被捕获为负 U 中心，施主能级位于间隙的上半部分。然而，在较高温度下，H 迁移到更靠近碳杂质的位置，施主能级下降，穿过间隙。同时，在上部间隙中引入受主能级，使缺陷成为正 U 中心。
The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique has been used to measure the stress-energy tensor and the results are compared with theoretical modeling. At low temperatures, implanted H is trapped as a negative-U center with a donor level in the upper half of the gap. However, at higher temperatures, H migrates closer to the carbon impurity and the donor level falls, crossing the gap. At the same time, an acceptor level is introduced into the upper gap making the defect a positive-U center.