Selective excitation luminescence in bulk‐grown GaAs
Selective excitation luminescence in bulk‐grown GaAs
复制标题
块状生长的砷化镓的选择性激发发光
DOI：
10.1063/1.93031
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发表时间：
1982
影响因子：
4
通讯作者：
T. C. Mcgill
中科院分区：
文献类型：
--
作者：
A. Hunter;T. C. Mcgill
用选择激发发光方法测量了体相生长的GaAs中两种不同浅受主的激发态能级。测得1S-2S能量差分别为21.5 meV和18.5 meV。通过将这些值与高质量外延GaAs中的双孔跃迁发光测量的值进行比较，[Ashen等人，J.Phys.化学。固体36,1041(1975)]，受体被鉴定为锌和C，测得的1S-2P能量差也支持这一鉴定。这些研究表明，选择激发发光可以用来识别体相生长的半绝缘砷化镓中的浅受主，因此可以作为体相生长样品的诊断工具。
We have measured the excited state levels of two different shallow acceptors in bulk‐grown GaAs, using selective excitation luminescence. The 1S–2S energy differences were measured to be 21.5 and 18.5 meV, respectively. By comparing these values to those measured by two‐hole transition luminescence in high quality epitaxial GaAs [Ashen et al., J. Phys. Chem. Solids 36, 1041 (1975)], the acceptors were identified as Zn and C. The measured 1S–2P energy differences also support the identification. These studies demonstrate that selective excitation luminescence can be used to identify shallow acceptors in bulk‐grown semi‐insulating GaAs, and hence can be used as a diagnostic tool for bulk‐grown samples.