Similar roles of electrons and holes in luminescence degradation of organic light-emitting devices
Similar roles of electrons and holes in luminescence degradation of organic light-emitting devices
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DOI：
10.1021/cm062621i
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发表时间：
2007-04-17
影响因子：
8.6
通讯作者：
Popovic, Zoran D.
中科院分区：
文献类型：
--
作者：
Luo, Yichun;Aziz, Hany;Popovic, Zoran D.
有机电致发光器件（OLED）的本征退化是导致器件寿命短的主要原因，对于更广泛的商业应用仍然是一个关键问题。多年来，已知基于三（8-羟基喹啉）铝（AlQ（3））的OLED中的固有劣化是由过量空穴注入到AlQ（3）发射层中引起的，这主要是由于早期观察到电子和空穴在器件中不同地起作用。然而，进一步的研究发现，过量的电子也会引起AlQ（3）层的显著退化，类似于已经建立的空穴。对有机发光器件退化机理的新认识有助于指导稳定器件的开发。
Intrinsic degradation in organic light-emitting devices (OLEDs), the dominating cause of the short device lifetime, continues to be a critical issue for wider commercial application. For many years, intrinsic degradation in tris(8-hydroxyquinoline) aluminum (AlQ(3))-based OLEDs has been known to be caused by excessive hole injection into the AlQ(3) emissive layer, due largely to earlier observations that electrons and holes act differently in the devices. However, a further investigation here leads to the discovery that excessive electrons can also induce significant degradation of the AlQ(3) layer, similar to what has been established for holes. The new understanding of the degradation mechanism of OLEDs is instrumental in directing the efforts of developing stable devices.