Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer
Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer
复制标题
DOI：
10.1016/j.solmat.2018.11.036
复制
发表时间：
2019-03
影响因子：
6.9
通讯作者：
Q. Lu;R. Beanland;D. Montesdeoca;P. Carrington;A. Marshall;A. Krier
中科院分区：
文献类型：
--
作者：
Q. Lu;R. Beanland;D. Montesdeoca;P. Carrington;A. Marshall;A. Krier
基于与GaSb（100）衬底匹配的GaInAsSb晶格的热光伏（TPV）器件在中红外光谱范围内表现出高的外量子效率（EQE），使其成为从高温“黑体”源回收废热的有希望的候选者。在这项工作中，通过使用分子束外延（MBE）中的高级变质缓冲层技术，将GaInAsSb合金集成到更具成本效益的GaAs（100）衬底上，其中包括GaSb/GaAs界面处的界面错配（IMF）阵列，然后是GaInSb/GaSb位错过滤层。GaInAsSb区的穿透位错可以被有效地抑制，从而得到用于TPV应用的高质量材料。为了确定GaAs上的GaInAsSb TPV的性能，将其与在具有相同结构的GaSb衬底上晶格匹配的单元生长TPV进行比较。GaAs上的TPV表现出与GaSb上类似的暗电流-电压特性。在来自800 °C氮化硅发射器的照射下，来自GaAs上的GaInAsSb TPV的短路电流密度（Jsc）达到GaSb上的对照电池的90%以上，并且开路电压（Voc）超过GaSb上的电池的80%。来自GaAs上的TPV的EQE达到约62%，这是来自GaAs上的这种类型的TPV的最高值。随着TPV结构设计的改进，未来可以在GaAs衬底上实现大面积GaInAsSb TPV板，用于废热能量回收应用。
Thermophotovoltaic (TPV) devices based on GaInAsSb lattice matched to GaSb (100) substrates have demonstrated high external quantum efficiencies (EQEs) in the mid-infrared spectral range, making them promising candidates for waste heat recovery from high temperature “blackbody” sources. In this work, the GaInAsSb alloy has been integrated onto more cost-effective GaAs (100) substrates by using advanced metamorphic buffer layer techniques in molecular beam epitaxy (MBE), which included an interfacial misfit (IMF) array at the GaSb/GaAs interface followed by GaInSb/GaSb dislocation filtering layers. The threading dislocations in the GaInAsSb region can be efficiently supressed, resulting in high quality materials for TPV applications. To determine the performance of the GaInAsSb TPV on GaAs it was compared with a cell grown lattice matched onto GaSb substrate having the same structure. The resulting TPV on GaAs exhibited similar dark current-voltage characteristics with that on GaSb. Under illumination from an 800 °C silicon nitride emitter, the short circuit current density (Jsc) from the GaInAsSb TPVs on GaAs reached more than 90% of the control cell on GaSb, and the open circuit voltage (Voc) exceeded 80% of the cell on GaSb. The EQE from the TPV on GaAs reached around 62%, the highest value reported from this type of TPV on GaAs. With improved TPV structure design, large area GaInAsSb TPV panels on GaAs substrates can be realized in the future for waste heat energy recovery applications.