Direct current to 350 GHz operation of rapid-single-flux-quantum T-flipflop circuits in niobium technology
Direct current to 350 GHz operation of rapid-single-flux-quantum T-flipflop circuits in niobium technology
复制标题
采用铌技术的快速单通量量子 T 触发器电路的直流操作频率可达 350 GHz
DOI：
10.1088/0953-2048/9/9/019
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发表时间：
1996
影响因子：
3.6
通讯作者：
J. Niemeyer
中科院分区：
文献类型：
--
作者：
M. Khabipov;R. Dolata;F.;W. Kessel;J. Niemeyer
实验研究了快速单通量量子（RSFQ） t -触发器电路在直流至近三倍特征频率范围内的工作功能。发现的操作范围分为两个性质不同的域。在第一个范围内，频率高达120 GHz，已经找到了设备的正确数字操作。在此范围之外，还发现了从200 GHz到近350 GHz的第二域，在此范围内提出了分频的准类似操作。典型的偏置电流边界在第一个域和第二个域。该电路采用- Al/Nb三层技术制备，外部分流约瑟夫森隧道结的临界电流密度为，最小面积约为。特征电压为，McCumber参数为。
The operational functionality of rapid-single-flux-quantum (RSFQ) T-flipflop circuits has been experimentally investigated in the frequency range from dc up to nearly three times the characteristic frequency . The operational range found is divided into two domains different in nature. In the first domain, ranging up to frequencies of 120 GHz , correct digital operation of the device has been found. Beyond this range a second domain has been found, ranging from about 200 GHz to nearly 350 GHz, in which quasi-analogous operation of frequency dividing is suggested. Typical bias current margins are in the first domain and in the second. The circuits have been fabricated using - Al/Nb trilayer technology with externally shunted Josephson tunnel junctions of critical current densities of and smallest areas of about . The characteristic voltage is and the McCumber parameter .