New developments in the heteroepitaxial growth of Be-chalcogenides based semiconducting alloys
New developments in the heteroepitaxial growth of Be-chalcogenides based semiconducting alloys
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Be硫族半导体合金异质外延生长新进展
DOI：
10.1007/s11664-999-0050-x
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发表时间：
1999
影响因子：
2.1
通讯作者：
J. Faurie
中科院分区：
文献类型：
--
作者：
C. Chauvet;V. Bousquet;É. Tournié;J. Faurie
研究了Zn（Mg）BeSe合金在GaAs和Si衬底上的异质外延生长。X射线测量表明，ZnMgBeSe四元合金可以在GaAs（001）上生长出高结构质量。从双X射线衍射得到的线宽低至20弧秒，蚀坑密度在10 - 3cm-2范围内。研究了ZnBeSe三元合金在邻位Si（001）衬底上的生长。利用光致发光谱和反射率研究了与硅晶格匹配的Zn_（0.55）Be_（0.45）Se晶体的光学性质，测量到基本禁带宽度E_0为3.85 eV。因此，该材料是紫外B检测的潜在候选材料。然而，重要的是要注意，这些测量是不确定的合金带隙的直接性质。
We have studied the heteroepitaxial growth of Zn(Mg)BeSe alloys on both GaAs and Si substrates. X-ray measurements show that ZnMgBeSe quaternary alloys can be grown with a high structural quality on GaAs(001). Linewidths as low as to 20 arcsec have been obtained from double x-ray diffraction and the etch pit density is in the range of 10−3cm−2. The growth of ZnBeSe ternary alloys on vicinal Si(001) substrates has been investigated. Optical properties of Zn0.55Be0.45Se which is lattice-matched to silicon have been studied by photoluminescence and reflectivity and a fundamental bandgap E0of 3.85 eV has been measured. Therefore, this material is a potential candidate for ultraviolet B detection. However, it is important to note that these measurements are not conclusive about the direct nature of alloys bandgaps.