High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells
High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells
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DOI：
10.1117/12.514262
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发表时间：
2002-06
期刊：
影响因子：
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通讯作者：
A. Kovsh;A. Zhukov;N. Maleev;S. Mikhrin;A. V. Vasil'ev;Y. Shernyakov;D. Livshits;M. Maximov
中科院分区：
文献类型：
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作者：
A. Kovsh;A. Zhukov;N. Maleev;S. Mikhrin;A. V. Vasil'ev;Y. Shernyakov;D. Livshits;M. Maximov
亚单层沉积技术的发展为制备不同类型和材料体系的应变异质结构提供了极大的灵活性。研究发现，在一定的生长条件下，在GaAs基体中沉积厚度小于1层的InAs，形成所谓的亚单层量子点（SML QDs）。这些量子点的能谱可以通过调整InAs的覆盖范围和GaAs间隔层的厚度而在很大范围内变化。stranski - krstanow (In,Ga)As量子点（SK量子点）已经得到了更详细的研究，与QW激光器相比，理论上已经证明可以预测更低的阈值电流密度为26 A/cm2。然而，SK量子点的尺寸变化较大，加上相对较低的片密度，导致在基态下可实现的峰值增益较低。这个问题是SK量子点激光器效率低的主要原因。由于具有较高的增益，SML量子点已经证明了其在高功率激光应用中的潜力。在本报告中，我们报告了SML QD激光器技术的进一步进展，从0.94 μm波长的100 μm宽激光二极管中获得高输出功率（6W）。高功率量子波激光器的最先进的性能也提出了比较。
Development of submonolayer deposition technique can offer significant flexibility in creation of strained heterostructures of different types and material systems. It was found that under certain growth conditions the deposition of InAs insertions of less than 1 monolayer (ML) thickness in GaAs matrix forms so-called sub-monolayer quantum dots (SML QDs). The energy spectrum of these QDs can be varied over a wide range by tuning the InAs coverage and the thickness of GaAs spacers. Stranski-Krastanow (In,Ga)As QDs (SK QDs), which have been investigated in more details, have proved theoretically predicted lower threshold current density of 26 A/cm2 in compare with QW lasers. However, strong size variation of SK QDs in combination with the relatively low sheet density leads to low peak gain achievable in the ground state. This problem is the reason of typically low efficiency of SK QD-based lasers. Due to higher gain, SML QDs have proved their potential for high power laser application. In this presentation we report on further progress in the technology of SML QD lasers demonstrating high output power (6W) from 100-μm-wide laser diode emitting at 0.94 μm. High power QW-based lasers of the state-of-the-art performance are also presented for comparison.