Evaluation of the Coulomb-limited mobility in high-κ dielectric metal oxide semiconductor field effect transistors
Evaluation of the Coulomb-limited mobility in high-κ dielectric metal oxide semiconductor field effect transistors
复制标题
DOI：
10.1063/1.3319558
复制
发表时间：
2010-03
影响因子：
3.2
通讯作者：
D. Casterman;M. M. Souza-M.
中科院分区：
文献类型：
--
作者：
D. Casterman;M. M. Souza-M.
本文提出了一种计算高κ金属氧化物半导体场效应晶体管库仑极限电子迁移率的绿色函数的有效数值方法。这种简单的方法适用于具有任意数量的不同介电常数的层的栅极堆叠。一个电荷分布与不同的介电分布被证明显示在库仑限制的迁移率的16%的增加相比，位于界面处的点电荷。金属栅极由于其无限的介电常数而降低了散射电势，这导致与多晶硅栅极相比电荷的影响较小。给出了具有0.5-0.8 nm的相同等效氧化物厚度的器件的库仑限制迁移率，其中（a）硅酸铪界面层（IL）和（B）零IL。
An efficient numerical method for the evaluation of the Green’s function used in the calculation of the Coulomb-limited electron mobility in high-κ metal oxide semiconductor field effect transistors is presented. This simple method is applicable to gate stacks with an arbitrary number of layers of varying dielectric permittivity. A charge profile with varying dielectric profile is demonstrated to show an increase in Coulomb-limited mobility of 16% in comparison to a point charge located at the interface. A metal gate reduces the scattering potential due to its infinite dielectric constant which leads to lesser impact of charge in comparison to a polysilicon gate. The Coulomb-limited mobility for devices having identical equivalent oxide thickness of 0.5–0.8 nm with (a) a hafnium silicate interfacial layer (IL) and (b) zero IL is presented.