Rashba-Type Spin-Orbit Splitting of Quantum Well States in Ultrathin Pb Films
Rashba-Type Spin-Orbit Splitting of Quantum Well States in Ultrathin Pb Films
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DOI：
10.1103/physrevlett.101.266802
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发表时间：
2008-12-31
影响因子：
8.6
通讯作者：
Osterwalder, Juerg
中科院分区：
文献类型：
--
作者：
Dil, J. Hugo;Meier, Fabian;Osterwalder, Juerg
发现Si（111）衬底上的Pb-Pb薄膜中形成的量子阱态存在Rashba型自旋轨道分裂。由此产生的动量分裂与半导体异质结构中发现的情况相当。与Au（111）表面态的Rashba分裂相比，分裂没有显示出覆盖依赖性，并且自旋极化的符号被反转。我们解释我们的结果在两个边界的Pb层的竞争效应。
A Rashba-type spin-orbit splitting is found for quantum well states formed in ultrathin Pb films on Si(111). The resulting momentum splitting is comparable to what is found for semiconductor heterostructures. The splitting shows no coverage dependency and the sign of the spin polarization is reversed compared to Rashba splitting in the Au(111) surface state. We explain our results by competing effects at the two boundaries of the Pb layer.