Defects and threshold switching in chalcogenides
Defects and threshold switching in chalcogenides
复制标题
硫族化物的缺陷和阈值转换
DOI：
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发表时间：
1992
期刊：
影响因子：
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通讯作者：
W. Herms
中科院分区：
文献类型：
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作者：
W. Herms
摘要本文用低能三中心键和高能交换价对两种两性缺陷来解释硫族化合物的阈值开关。这个建议也允许解释相对较短的松弛时间和高缺陷浓度。
Abstract An explanation of threshold switching in chalcogenides is suggested by means of two amphoteric defects related to low-energy three-centre bonds and high-energy valence-alternating pairs. This proposal also allows the interpretation of the relatively short relaxation times and the high defect concentrations.