Electrochemical deposition of Cu-doped p-type iron oxide thin films
Electrochemical deposition of Cu-doped p-type iron oxide thin films
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DOI：
10.1088/1361-6641/aad76a
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发表时间：
2018-10-01
影响因子：
1.9
通讯作者：
Ichimura, Masaya
中科院分区：
文献类型：
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作者：
Kobayashi, Satoshi;Ichimura, Masaya
铁锈的主要成分Fe 2 O3和γ-FeOOH是n型半导体，带隙为2.0，与2.6 eV相似。在这项工作中，我们沉积铜掺杂的p型氧化铁的电化学沉积方法。期望将p型氧化铁应用于电化学中的光电阴极以及pn结太阳能电池。薄膜由含有FeSO 4和CuSO 4的水溶液沉积，并在400 ℃的空气中退火。当膜中的铜与铁的比率为约10%或更大时，导电类型转换为p型。在空气中退火改善了膜与衬底的粘附性并增强了p型导电性。
Fe2O3 and gamma-FeOOH, major constituents of iron rust, are n-type semiconductors with a bandgap of 2.0 similar to 2.6 eV. In this work, we deposited Cu-doped p-type iron oxide by the electrochemical deposition method. p-type iron oxide is expected to be applied for photo-cathodes in electrochemistry and also for pn junction solar cells. The films were deposited from an aqueous solution containing FeSO4 and CuSO4 and annealed in air at 400 degrees C. The conduction type was converted into p-type when the ratio of copper to iron in the film was about 10% or more. Annealing in air improved film adhesion to the substrate and enhanced p-type conductivity.