Low-loss crystal-ion-sliced single-crystal potassium tantalate films
Low-loss crystal-ion-sliced single-crystal potassium tantalate films
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DOI：
10.1063/1.1446214
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发表时间：
2002-02
影响因子：
4
通讯作者：
T. Izuhara;R. Osgood;M. Levy;M. Reeves;Y. Wang;A. N. Roy;H. Bakhru
中科院分区：
文献类型：
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作者：
T. Izuhara;R. Osgood;M. Levy;M. Reeves;Y. Wang;A. N. Roy;H. Bakhru
本文研究了用晶体离子切片法制备的10 μ m厚钽酸钾单晶薄膜的介电响应。扫描微波显微镜显示，注入，预蚀刻的样品表现出散装样的介电常数和低损耗角正切（0.0009）在1.7 GHz。分离的自支撑膜由于残余离子引起的应力而具有稍高的损耗角正切。通过蚀刻或退火选择性地松弛该应力降低了介电损耗。
The dielectric response has been studied in 10-μm-thick, single-crystal potassium tantalate films formed by crystal ion slicing. Scanning microwave microscopy shows that the implanted, pre-etched samples exhibit a bulk-like permittivity and low-loss tangent (0.0009) at 1.7 GHz. The separated free-standing films have somewhat higher loss tangents due to residual-ion-induced stress. Selective relaxation of this stress by etching or annealing reduces the dielectric loss.