Making B+-tree efficient in PCM-based main memory
Making B+-tree efficient in PCM-based main memory
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DOI：
10.1145/2627369.2627630
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发表时间：
2014-08
期刊：
影响因子：
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通讯作者：
Ping Chi;Wang-Chien Lee;Yuan Xie
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文献类型：
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作者：
Ping Chi;Wang-Chien Lee;Yuan Xie
相变存储器（PCM）是一种很有前途的技术，用于构建未来的大规模和低功耗的主存储器系统。内存数据库（MMDB）可以从PCM的高密度中受益。然而，其长的写延迟，高的写能量，有限的生命周期，带来了挑战，数据库算法设计的PCM为基础的存储系统。在本文中，我们专注于使B+树PCM友好的，通过减少对PCM的写访问。我们提出了三种不同的方案。实验结果表明，它们能有效地提高PCM存储器的性能，降低存储器的能耗，延长存储器的寿命。
Phase change memory (PCM) is a promising technology for building future large-scale and low-power main memory systems. Main memory databases (MMDBs) can benefit from the high density of PCM. However, its long write latency, high write energy, and limited lifetime, bring challenges to database algorithm design for PCM-based memory systems. In this paper, we focus on making B+-tree PCM-friendly by reducing the write accesses to PCM. We propose three different schemes. Experimental results show that they can efficiently improve the performance, reduce the memory energy consumption, and improve the lifetime for PCM memory.