Electrically and Mechanically Tunable Electron Spins in Silicon Carbide Color Centers
Electrically and Mechanically Tunable Electron Spins in Silicon Carbide Color Centers
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DOI：
10.1103/physrevlett.112.187601
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发表时间：
2014-05-05
影响因子：
8.6
通讯作者：
Awschalom, David D.
中科院分区：
文献类型：
--
作者：
Falk, Abram L.;Klimov, Paul V.;Awschalom, David D.
半导体缺陷的电子自旋可能与其主体产生复杂的相互作用，特别是在碳化硅等极性材料中，其中电气和机械变量相互交织。通过将脉冲自旋共振与从头算模拟相结合，我们发现4H-SiC中性双空位中的自旋-自旋相互作用产生具有强斯塔克效应、亚10(-6)应变灵敏度和强度对比度为15%-36%的高度自旋依赖性光致发光的自旋态。这些结果使 SiC 色心成为传感纳米级电场和应变场的引人注目的系统。
The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab initio simulations, we show that spin-spin interactions in 4H-SiC neutral divacancies give rise to spin states with a strong Stark effect, sub-10(-6) strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15%-36%. These results establish SiC color centers as compelling systems for sensing nanoscale electric and strain fields.