Erbium doping of molecular beam epitaxial GaAs
Erbium doping of molecular beam epitaxial GaAs
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分子束外延GaAs的铒掺杂
DOI：
10.1063/1.98127
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发表时间：
1987
影响因子：
4
通讯作者：
M. Maier
中科院分区：
文献类型：
--
作者：
R. Smith;H. Müller;H. Ennen;P. Wennekers;M. Maier
成功地实现了分子束外延−_3掺杂2×10~(19)cm~(-1)Er~(3+)。当掺杂浓度达到约5×10~(18)cm时，−_3的表面形貌保持良好，但当掺杂浓度较高时，表面变得规整。霍尔和剖面测量表明，掺铒产生了能够补偿掺硅层的陷阱能级。首次在室温下观察到了掺入III-V半导体中的稀土元素的光致发光。
The doping of molecular beam epitaxial GaAs with erbium up to a concentration of 2×1019 cm−3 has been successfully demonstrated. Up to a concentration of about 5×1018 cm−3 the surface morphology remained good but for higher doping levels the surface became structured. Hall and profile measurements indicate that erbium doping gives rise to a trapping level capable of compensating silicon‐doped layers. For the first time photoluminescence from a rare earth element incorporated in a III‐V semiconductor has been observed at room temperature.