Electrode contacts on ferroelectric Pb(ZrxTi1−x)O3 and SrBi2Ta2O9 thin films and their influence on fatigue properties
Electrode contacts on ferroelectric Pb(ZrxTi1−x)O3 and SrBi2Ta2O9 thin films and their influence on fatigue properties
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DOI：
10.1063/1.359737
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发表时间：
1995-10
影响因子：
3.2
通讯作者：
J. J. Lee-J.;C. Thio;S. Desu
中科院分区：
文献类型：
--
作者：
J. J. Lee-J.;C. Thio;S. Desu
研究了铁电Pb（ZrxTi 1 −x）O3（PZT）和SrBi 2 Ta 2 O 9薄膜在循环过程中介电性能的退化（疲劳）。分别采用金属有机物分解法和脉冲激光沉积法制备了PZT和SrBi 2 Ta 2 O 9薄膜。研究了具有铂（Pt）和氧化钌（RuO 2）电极的样品。Pt/PZT、RuO 2/PZT和Pt/SrBi 2 Ta 2 O 9界面处的界面电容（如果有的话）由低场介电常数（er）测量的厚度依赖性确定。观察到Pt/PZT界面存在下层，但RuO 2/PZT和Pt/SrBi 2 Ta 2 O 9界面不存在下层。在Pt/PZT的情况下，该界面层的电容随着疲劳的增加而减小，而体PZT膜的ER保持恒定。这表明疲劳增加了界面层厚度和/或降低了界面层介电常数，但不改变体特性。对于RuO_2/PZT/RuO_2和Pt/S结构的电容器，
The degradation (fatigue) of dielectric properties of ferroelectric Pb(ZrxTi1−x)O3 (PZT) and SrBi2Ta2O9 thin films during cycling was investigated. PZT and SrBi2Ta2O9 thin films were fabricated by metalorganic decomposition and pulsed laser deposition, respectively. Samples with electrodes of platinum (Pt) and ruthenium oxide (RuO2) were studied. The interfacial capacitance (if any) at the Pt/PZT, RuO2/PZT, and Pt/SrBi2Ta2O9 interfaces was determined from the thickness dependence of low‐field dielectric permittivity (er) measurements. It was observed that a low er layer existed at the Pt/PZT interface but not at the RuO2/PZT and Pt/SrBi2Ta2O9 interfaces. In the case of Pt/PZT, the capacitance of this interfacial layer decreases with increasing fatigue while the er of the bulk PZT film remains constant. This indicates that fatigue increases the interfacial layer thickness and/or decreases interfacial layer permittivity, but does not change the bulk properties. For the capacitors with RuO2/PZT/RuO2 and Pt/S...