A Linear GaN High Power Amplifier MMIC for Ka-Band Satellite Communications
A Linear GaN High Power Amplifier MMIC for Ka-Band Satellite Communications
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DOI：
10.1109/lmwc.2016.2585553
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发表时间：
2016-08-01
影响因子：
3
通讯作者：
Yom, In Bok
中科院分区：
文献类型：
--
作者：
Noh, Youn Sub;Yom, In Bok
采用0.15微米氮化镓(GaN)高电子迁移率晶体管(HEMT)工艺，在碳化硅衬底上设计了一种线性高功率放大器(HPA)单片微波集成电路(MMIC)。为了保持功率级的线性特性，3级HPA MMIC采用了2：4：8级比的8×50µm单元晶体管。MMIC在21.5 GHz时提供39.5dBm的P-3(分贝)和35%的PAE。-25dBc的线性输出功率(P-L)为37.3dBm，对应的PAE为29.5%。MMIC尺寸为3.4 mm x 2.5 mm，输出功率密度为1049 mW/mm(2)。
A linear high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) is designed with 0.15 mu m gallium nitride (GaN) high electron mobility transistor (HEMT) technology on silicon carbide (SiC) substrate. To keep the linear characteristics of the power stage, 2: 4: 8 staging ratio of 8 x 50 mu m unit transistor is adapted for the 3-stage HPA MMIC. The MMIC delivers P-3 (dB) of 39.5 dBm with a PAE of 35% at 21.5 GHz. Linear output power (P-L) meeting IMD3 of -25 dBc is 37.3 dBm with an associated PAE of 29.5%. The MMIC dimensions are 3.4 mm x 2.5 mm, generating an output power density of 1049 mW/mm(2).