A BER-Suppressed PUF With an Amplification of Process Mismatch Effect in an Oscillator Collapse Topology

A BER-Suppressed PUF With an Amplification of Process Mismatch Effect in an Oscillator Collapse Topology
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振荡器崩溃拓扑中具有放大工艺失配效应的 BER 抑制 PUF

DOI:
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发表时间:
2022
影响因子:
5.4
通讯作者:
J. Sim
J. Sim
中科院分区:
工程技术1区
文献类型:
--
作者:
Jaehan Park;Byungjun Kim;J. Sim

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物理不可克隆功能(PUF)已经通过使用显式放大器或通过使信号路径在振荡器中重复经历相同的延迟倾斜来放大随机给定的小过程不匹配的电路实现。虽然放大器方法提供了快速响应,但在放大的第一阶段容易受到噪声的影响。另一方面,基于振荡器的方案需要较长的时间来开发数字输出,同时获得良好的抗噪性。本文提出了一种利用混合结构的PUF电路,该电路在振荡器崩溃拓扑中结合了过程倾斜放大方案。该方案弥补了两种方法的不足,同时取得了对过程变化的高灵敏度和对噪声的良好抗扰性的优点。偶数级环形振荡器(RO)的供电轨由基于二极管的阈值采样块交替馈电。采用40纳米CMOS工艺制备了128个PUF单元阵列的集成电路,其误码率为0.027%。具有3.64%掩蔽率的7-b时间多数投票(TMV7)处理证明了在名义条件下的无错误操作。在0.7 ~ 1.4 V电压范围和- 40℃~ 125℃温度范围内,最坏条件下的误码率为0.0019%。
The physically unclonable function (PUF) has been implemented with circuits that perform amplification of randomly given small process mismatch by using an explicit amplifier or by making a signal path repeatedly experience the same delay skew in an oscillator. Though the amplifier approach provides a fast response, it is vulnerable to noise at the first stage of amplification. On the other hand, the oscillator-based scheme requires a longer time to develop a digital output while achieving good noise immunity. This article proposes a PUF circuit exploiting a hybrid architecture, which combines a process skew amplification scheme in an oscillator collapse topology. The proposed scheme compensates for the drawbacks of the two approaches while achieving merits of them, i.e., high sensitivity to process variation and good immunity to noise. The supply rails of an even-stage ring oscillator (RO) are alternately fed from a diode-based threshold-sampling block. An IC with an array of 128 PUF cells is fabricated in 40-nm CMOS, showing a native bit error rate (BER) of 0.027%. Processing of 7-b temporal majority voting (TMV7) with a 3.64% masking demonstrates an error-free operation in a nominal condition. It shows a BER of 0.0019% in the worst condition under a voltage range of 0.7–1.4 V and a temperature range of −40 °C to 125 °C.